ASML and TSMC target 12-inch EUV masks

• ASML and TSMC launched an industry initiative to move High NA EUV lithography from 6-inch to 12-inch photomasks.
• The partners aim to establish a 12-inch mask pilot line by 2031, with advanced node production support targeted for 2033.
• The companies said larger masks could improve scanner productivity, reduce chipmaking costs, and support future AI-driven chip complexity.

ASML (NASDAQ:ASML) and TSMC (NYSE:TSM) launched an industry initiative to transition High NA EUV lithography from 6-inch to 12-inch photomasks, with a pilot line targeted for 2031 and advanced node production support expected by 2033.

High NA EUV systems are initially expected to enter production using existing 6-inch masks, while the companies are developing larger masks to address productivity and manufacturing limitations.

The partners said 12-inch photomasks could increase scanner productivity, lower chip production costs, and remove stitching constraints, while TSMC plans to use ASML’s High NA technology for high-volume manufacturing of advanced nodes from 2030.

TSMC said it expects more chip layers to adopt High NA EUV technology as transistor designs become more complex due to demand from artificial intelligence applications.

ASML supplies semiconductor lithography systems used by chip manufacturers globally, while TSMC operates advanced semiconductor foundries producing chips for technology companies across multiple markets.