4DS Memory (ASX:4DS) has been granted a USA patent for its Conductive Amorphous Oxide Contact Layers, which is the 34th patent its obtained.
The semiconductor development company of non-volatile memory technology, located in Silicon Valley, says the patent adds to its existing portfolio of patents, which protect its Interface Switching ReRAM technology.
4DS Memory's Interim Executive Chairman, David McAuliffe says the patents are valuable to the company and will become even moreso if its successful with its Fourth Platform Lot in 2023.
The company also has a joint development agreement with HGST, a global storage leader, and collaborate with imec, a research and innovation hub.